Design and simulation of excitation laser system for <Emphasis Type="Italic">in-situ</Emphasis> Raman monitoring |
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Authors: | M Gnyba R Bogdanowicz |
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Institution: | (1) Department of Optoelectronics and Electronic Systems, Gdańsk University of Technology, 11/12 Narutowicza St., 80-952 Gdańsk, Poland |
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Abstract: | A system for in-situ Raman monitoring of thin film growth
during Microwave Plasma Assisted Chemical Vapour Deposition (μPACVD)
process was developed. Dedicated Raman probe system was designed for
precise focusing of an excitation laser beam into the growing film.
The probes have to be placed outside the reaction chamber (working
distance about 20 cm) in order to avoid interference of the process
by work of measurement devices (non-invasive measurements). Analysis
and calculation supported by simulations based on Monte-Carlo ray-tracing
method and Beam Propagation Method showed that glancing-incidence
optical configuration is of the Raman system is the most
sufficient one. Range of the most effective incidence angles of
the excitation beam was determined. Shape and size of laser spot
at the sample was determined. Correction of spherical aberrations
by use of doublets was proposed to ensure efficient focusing of the
excitation beam into the investigated film. |
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Keywords: | |
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