The improvement of Al2O3/AlGaN/GaN MISHEMT performance by N2 plasma pretreatment |
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| Authors: | Feng Qian Tian Yuan Bi Zhi-Wei Yue Yuan-Zheng Ni Jin-Yu Zhang Jin-Cheng Hao Yue Yang Lin-An |
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| Affiliation: | School of Microelectronics, Xidian University, Xi'an 710071, China Key Laboratory of Wide Band-Gap SemiconductorMaterials and Devices, Xidian University, Xi'an 710071,China |
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| Abstract: | This paper discusses the effect of N2 plasma treatment beforedielectric deposition on the electrical performance ofa Al2O3/AlGaN/GaN metal-insulator-semiconductor highelectron mobility transistor (MISHEMT), with Al2O3deposited by atomic layer deposition. The results indicated that the gateleakage was decreased two orders of magnitude after theAl2O3/AlGaN interface was pretreated by N2 plasma.Furthermore, effects of N2 plasma pretreatment on theelectrical properties of the AlGaN/Al2O1-x interface wereinvestigated by x-ray photoelectron spectroscopy measurements andthe interface quality between Al2O3 and AlGaN film wasimproved. |
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| Keywords: | Al2O3/AlGaN/GaNMISHEMT atomic layer deposition N2 plasma pretreatment |
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