基于WO_x阻变材料的RRAM电路设计

采用HHNEC0.18μm标准CMOS工艺设计实现了多个1kb容量的阻变存储器电路。针对WOx阻变材料的操作特点,提出了可切换的写电路以及自调节的读参考电路,满足了单极(Unipolar)与双极(Bipolar)兼容操作需求的同时提高了读操作的成功率。引入位线限流模块解决了置位(set)过程需要字线限流的问题,进而可以实现包含‘0’和‘1’多位数据的并行写入。芯片采用高低两种电压设计,同时包含多种阵列尺寸结构的对比测试电路。

RRAM Circuit Design Based on WOx Resistance Change Materials

Multi-1 kb resistive random access memory(RRAM) chips are demonstrated in HHNEC 0.18 μm CMOS logic process.According to the operating characteristics of the WOx material,polarity-switching write circuit(PSWC) and the self-adjusting read reference circuit(SARC) are proposed.Unipolar and Bipolar compatible operation is achieved while improving the success rate of the read operation.Bit-line current limiter is introduced to solve the problem that Word-Line requires the word-line current limiting in set mode,and thus ’0’ and ’1’ multi-bits of data parallel-writing can be achieved.The chip is designed for high and low voltage,and contains comparison test circuit with a variety of array size structure.