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Photoreflectance and photoluminescence study of short period (GaAs)n/(AlAs)n superlattices with n = 1 – 15
Authors:C Hamaguchi  T Nakazawa  T Matsuoka  T Ohya  K Taniguchi  H Fujimoto  K Imanishi  H Kato  Y Watanabe
Abstract:Photoreflectance and photoluminescence measurements were performed in (GaAs)n/(AlAs)n (n = 1 – 15) short-period superlattices in the temperature range from 25 K to 275 K. Weak signals of photoreflectance associated with the critical point of the pseudodirect transition, weakly allowed direct transition arising from the zone-folding effect, have been observed as well as main signals associated with the direct allowed transitions. This assignment is supported by the measurement and analysis of the temperature dependence of the photoluminescence intensity.
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