Influence of an electric field and a high excitation density on the luminescence of epitaxial GaN films

The influence on the recombination luminescence spectra of a field applied to the Schottky barrier and a high excitation density GaN epitaxial films grown by metalorganic chemical-vapor deposition (MOCVD) is investigated. It is discovered that quenching of the luminescence takes place under a reverse bias, while an increase in its intensity occurs under a forward bias. The effect observed is attributed to thickness variation of the space-charge layer under the effects of the applied voltage. The appearance of a new band caused by exciton-exciton collisions is observed under the conditions of a high excitation density. Fiz. Tverd. Tela (St. Petersburg) 40, 936–937 (May 1998)