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Dynamic temperature rise of shielded MR sensors during simulated electrostatic discharge pulses of variable pulse width |
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| Institution: | 1. Department of Mechanical Science and Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464 8603, Japan;2. Riken Co., Ltd., Kashiwazaki, Niigata, Japan;3. Department of Mechanical Engineering, Gifu University, 1-1 Yanagido, Gifu City 501-1193, Japan;1. Department of Chemistry, Chulalongkorn University, Bangkok, Thailand;2. Department of Dermatology, Venerology and Allergology, Charité – Universitätsmedizin Berlin, Berlin, Germany;3. Program in Biotechnology, Faculty of Science, Chulalongkorn University, Bangkok, Thailand;1. “Nicolae Bălcescu” Land Forces Academy, Revoluției 3-5, Sibiu 550170, Romania;2. Technical University Cluj Napoca, Memorandumului 28, Cluj Napoca, Romania;3. “Transilvania“ University of Brasov, Eroilor 29, Brașov 500036, Romania |
| Abstract: | The temperature rise from electrical over-stress (EOS) and electrostatic discharge (ESD) of shielded AMR sensors used for magnetic tape storage devices is studied using square wave voltage pulses with widths from 35 ns to 2 ms. A phenomenological model has been developed to describe the dynamic stripe temperature versus pulse width and power for the time range studied as well as for a wide range in sensor geometries. The temperature required to melt the stripes was determined to be . The activation energy required to achieve a 2% increase in stripe resistance for pulses between 100 ns and 1 ms was determined to be 2.8 eV and is associated with interdiffusion of the stripe metals. |
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