Current conduction mechanisms of RF-Magnetron sputtered Y2O3 gate oxide on gallium nitride |
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Authors: | Hock Jin Quah Kuan Yew Cheong |
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Affiliation: | Energy Efficient & Sustainable Semiconductor Research Group, School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia, Engineering Campus, 14300 Nibong Tebal, Seberang Perai Selatan, Penang, Malaysia |
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Abstract: | Current conduction mechanisms through as-deposited and post-deposition annealed (200–800 °C) RF-magnetron sputtered Y2O3 gate oxides on n-type GaN have been systematically investigated with current–voltage measurements at temperature in the range of 25–175 °C. The possible current conduction mechanisms that govern the leakage current of Y2O3/GaN metal-oxide-semiconductor test structure are space-charge-limited conduction, Schottky emission, Poole–Frenkel emission, and Fowler-Nordheim tunneling. The dominance of these conduction mechanisms is depending on applied electric field and measurement temperatures. |
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Keywords: | Space-charge-limited Schottky emission Poole–Frenkel emission Fowler–Nordheim tunneling Yttrium oxide Gallium nitride |
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