Electronic transport and carrier concentration in conductive ZnO:Ga thin films |
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Authors: | Changwoo Nahm Sungjin Shin Woojin Lee Jae Ik Kim Dae-Ryong Jung Jongmin Kim Seunghoon Nam Sujin Byun Byungwoo Park |
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Affiliation: | WCU Hybrid Materials Program, Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul 151-744, Republic of Korea |
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Abstract: | Transparent and conductive Ga-doped ZnO (ZnO:Ga) films were post-annealed after sputter deposition, and their structural and electrical properties were investigated. Post-annealing led to an improvement of crystallinity along the [001] direction, but did not change lateral grain size. Therefore, carrier concentration and electron mobility of films were analyzed as a function of crystallinity. The electrical parameters were obtained with both optical reflectance based on the Drude free-electron model and the Hall method, and similar tendencies were observed within the two methods. Even though the lowest resistivity was demonstrated by the film annealed at 550 °C, the optimum values for carrier concentration and mobility were observed in films with different post-annealing temperatures. |
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