Fabrication and characterization of thermal evaporated n-Si/ p-ZnTe thin film heterojunction diodes |
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| Authors: | Gowrish K. Rao Kasturi V. Bangera G.K. Shivakumar |
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| Affiliation: | 1. Department of Physics, Manipal Institute of Technology, Manipal University, Manipal 576104, India;2. Thin Film Laboratory, Department of Physics, National Institute of Technology Karnataka, Surathkal, Mangalore 575025, India |
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| Abstract: | The paper reports the fabrication and detailed electrical characterization of thermal evaporated n-Si/p-ZnTe thin film heterojunction diodes. The heterojunction diodes were prepared by depositing ZnTe films on n-Si substrates. The conduction mechanism, barrier height, space charge density and width of the depletion region were determined by I–V and C–V characteristics of the heterojunction diodes. The bandgap and activation energies of n-Si and p-ZnTe were also determined and a theoretical band diagram of n-Si/p-ZnTe heterojunction was drawn based on Anderson's model. |
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