Effect of Si doping on epitaxial lateral overgrowth of GaN: A spatially resolved micro-Raman scattering study |
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Authors: | Hanul Kim Heesuk Rho Lee-Woon Jang In-Hwan Lee |
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Institution: | 1. Department of Physics, Research Institute of Physics and Chemistry, Chonbuk National University, Jeonju 561-756, Republic of Korea;2. School of Advanced Materials Engineering, Research Center of Advanced Materials Development, Chonbuk National University, Jeonju 561-756, Republic of Korea |
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Abstract: | We report spatially resolved Raman scattering from Si-doped epitaxial laterally overgrown GaN structures to investigate spatial variations in stress and free electron concentration. The doping-induced increase in the free electron concentration is relatively higher in the laterally overgrown regions than in the coherently grown regions due to the increased contribution of the high-energy A1 longitudinal optical phonon–plasmon coupled mode. In addition, the E2(high) E2(low)] phonon energy shifts downward (upward) more significantly in the laterally overgrown regions than in the coherently grown regions. The doping-induced Raman shifts of the E2(high) and E2(low) phonons in the laterally overgrown regions are approximately ?0.6 and 0.11 cm?1, respectively, corresponding to the in-plane stress of ~0.22 GPa. |
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