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Monte Carlo simulation of spin relaxation in core-shell nanowires of dilute magnetic semiconductors
Authors:S. Sabiq Chishti  Bahniman Ghosh  Bhupesh Bishnoi
Affiliation:1. Department of Electrical Engineering, Indian Institute of Technology Kanpur, Kanpur 208016, India;2. Microelectronics Research Center, 10100 Burnet Road, University of Texas at Austin, Austin, TX 78758, United States
Abstract:Spin transport behaviour in stand-alone and core-shell nanowire (NW) structure composed of dilute magnetic semiconductor (DMS) has been analysed using Semi-classical Monte Carlo approach. Inspired by recent attempts on exploring various factors instrumental in determining the spin dynamics, we have employed four DMS materials, namely, CdMnS, CdMnSe, ZnMnSe and CdMnTe for our study. Dominant mechanisms for spin relaxation, D'yakonov-Perel and Elliot-Yafet, have been actively employed in our heuristic model to simulate the spin transport. The dependence of spin relaxation length (SRL) on the diameter of the core has been observed and explained. The first order calculations used to develop the model shows the superiority of the core-shell structure over stand-alone nanowire (NW) structure in terms of spin transport.
Keywords:Monte Carlo simulation  Spin relaxation  Dilute magnetic semiconductors  Core–shell nanowire (NW)
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