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Photothermal deflection spectroscopy PDS investigation of optical and thermal properties of BGaAs/GaAs alloys
Authors:S. Ilahi  F. Saidi  R. Hamila  N. Yacoubi  L. Auvray  H. Maaref
Affiliation:1. Unité de Recherche de caractérisation photothermique, Institut préparatoire aux Etudes d''Ingénieurs de Nabeul (IPEIN), Nabeul, Université de Carthage, Tunisia;2. Université de Monastir, Laboratoire de Micro-Optoélectronique et Nanostructures, Faculté des Sciences de Monastir. Avenue de l''Environnement, Monastir 5019, Tunisia;3. Laboratoire Multimateriaux et Interfaces, Université Claude Bernard Lyon I, 43, Boulevard du 11 Novembre 1918, 69622 Villeurbanne Cedex, France
Abstract:Optical and thermal properties of metal organic chemical vapor deposition (MOCVD) grown BGaAs/GaAs alloys with boron composition of 3% and 8% are investigated by photothermal deflection spectroscopy (PDS). The band gap energy, absorption spectrum and thermal conductivities are evaluated by comparing the experimental and the theoretical PDS signals amplitude and phase. The boron effects in these parameters have been shown. In fact, it was found that gap energy and thermal conductivity of BGaAs/GaAs alloys with 3% of boron are respectivelly 1376 mev and 4.7 W/m K, these values decrease to 1360 mev and 3.5 W/m K for 8% of boron composition.
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