Experimental and theoretical investigation of phosphorus in-situ doping of germanium epitaxial layers |
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| Authors: | Hyun-Yong Yu Enes Battal Ali Kemal Okyay Jaewoo Shim Jin-Hong Park Jung Woo Baek Krishna C. Saraswat |
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| Affiliation: | 1. School of Electrical Engineering, Korea University, Seoul 136-713, Republic of Korea;2. Department of Electrical and Electronic Engineering, Bilkent University, 06800 Ankara, Turkey;3. School of Electronics and Electrical Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea;4. Department of Systems Management Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea;5. Department of Electrical Engineering, Stanford University, Stanford, CA 94305, United States |
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| Abstract: | We investigate phosphorus in-situ doping characteristics in germanium (Ge) during epitaxial growth by spreading resistance profiling analysis. In addition, we present an accurate model for the kinetics of the diffusion in the in-situ process, modeling combined growth and diffusion events. The activation energy and pre-exponential factor for phosphorus (P) diffusion are determined to be 1.91 eV and 3.75 × 10?5 cm2/s. These results show that P in-situ doping diffusivity is low enough to form shallow junctions for high performance Ge devices. |
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