Internal quantum efficiency of GaN-based light-emitting diodes grown on silicon substrates determined from rate equation analyses |
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Authors: | Han-Youl Ryu Ki-Seong Jeon Jun-Ho Sung Min-Woo Lee Euna Lee Hooyoung Song Min-Gu Kang Yoonho Choi Jeong-Soo Lee |
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Affiliation: | 1. Department of Physics, Inha University, Inchon 402-751, Republic of Korea;2. LG Electronics Advanced Research Institute, Seoul 137-724, Republic of Korea |
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Abstract: | We present a convenient and reliable method for determining the internal quantum efficiency (IQE) in GaN-based blue light-emitting diodes (LEDs) grown on Si(111) substrates based on the carrier rate equation model. By using the peak point of the efficiency curve in photoluminescence (PL) measurements as the parameter of the rate equation analysis, the IQE can be unambiguously determined without any pre-assumed parameters. The theoretical IQE model is used to fit the measured PL efficiency curves and the IQE of LED samples are determined. The maximum IQE of the LED sample grown on the Si substrate was obtained to be 0.74, which is found to agree well with the results obtained by conventional temperature-dependent PL measurements. |
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Keywords: | Light-emitting diode GaN on Si Internal quantum efficiency Rate equation |
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