Room-temperature flexible thin film transistor with high mobility |
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Authors: | Hsiao-Hsuan Hsu Chun-Yen Chang Chun-Hu Cheng |
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Institution: | 1. Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, ROC;2. Department of Mechatronic Technology, National Taiwan Normal University, Taipei 106, Taiwan, ROC |
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Abstract: | We report a room-temperature and high-mobility InGaZnO thin-film transistor on flexible substrate. To gain both high gate capacitance and low leakage current, we adopt stacked dielectric of Y2O3/TiO2/Y2O3. This flexible IGZO TFT shows a low threshold voltage of 0.45 V, a small sub-threshold swing of 0.16 V/decade and very high field-effect mobility of 40 cm2/V. Such good performance is mainly contributed by improved gate stack structure and thickness modulation of IGZO channel that reduce the interface trap density without apparent mobility degradation. |
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Keywords: | InGaZnO (IGZO) Thin film transistor (TFT) |
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