|
|||||
|
|
Influence of AlN nucleation layer growth conditions on quality of GaN layers deposited on (0 0 0 1) sapphire |
|
| Authors: | Mario Gonsalves Wook Kim Vijay Narayanan and S Mahajan |
| Institution: | Department of Chemical and Materials Engineering and Center of Solid State Electronics Research, Arizona State University, Tempe, AZ 85287-6006, USA |
| Abstract: | The influence of AlN nucleation layer (NL) growth conditions on the quality of GaN layer deposited on (0 0 0 1) sapphire by organometallic chemical vapor phase epitaxy (OMVPE) has been investigated by X-ray diffraction, atomic force microscopy and transmission electron microscopy. Growth pressure, temperature and time were varied in this study. Results indicate that there exists an optimal thickness of the NL is required for optimal growth. Both thin and thick NLs are not conducive to the growth of high-quality GaN layers. Arguments have been developed to rationalize these observations. |
| Keywords: | A1 Defects A1 Nucleation A3 Organometallic vapor phase epitaxy B1 Gallium compounds B1 Nitrides |
| 本文献已被 ScienceDirect 等数据库收录！ | |