| 化学机械抛光中的颗粒技术 |
| |
| 引用本文： | Kalyan S.Gokhale,Brij M.Moudgil,涂佃柳,刘晓斌.化学机械抛光中的颗粒技术[J].电子工业专用设备,2011,40(2):1-7. |
| |
| 作者姓名： | Kalyan S.Gokhale Brij M.Moudgil 涂佃柳 刘晓斌 |
| |
| 作者单位： | Kalyan S.Gokhale,Brij M.Moudgil(Department of Materials Science and Engineering and Particle Engineering Research Center,University of Florida);涂佃柳,刘晓斌(中国电子科技集团公司第四十五研究所,北京,101601) |
| |
| 基金项目： | 作者感谢佛罗里达大学微粒研究中心、国家科学基金EEC-94-02989、国家卫生研究所基金P20RR020654和微粒研究中心的合作伙伴的资助.在该篇文章中所出现的任何观点、发现及结论或推荐均是作者本人看法,并不反映国家科学基金、国家卫生研究所和微粒研究中心合作伙伴的看法. |
| |
| 摘 要： | 多层金属化是集成芯片以摩尔定律的速度更替的重要工艺手段.在多层金属化中,平坦的晶圆表面对每道工序的成功完成都是非常必要的,而化学机械抛光工艺能在每道工序之前将晶圆表面抛光.化学机械抛光主要是通过使用颗粒研浆去除材料来实现晶圆抛光.除了研浆本身的化学性质外,研浆的效果也受研磨颗粒性质的影响.如果我们能够更好的理解研磨颗粒...
|
| 关 键 词： | CMP 多层金属化 研磨颗粒 设计 |
Particle Technology in Chemical Mechanical Planarization |
| |
| Kalyan S.Gokhale , Brij M.Moudgil.Particle Technology in Chemical Mechanical Planarization[J].Equipment for Electronic Products Marufacturing,2011,40(2):1-7. |
| |
| Authors: | Kalyan SGokhale Brij MMoudgil |
| |
| Institution: | Kalyan S.Gokhale and Brij M.Moudgil(Department of Materials Science and Engineering and Particle Engineering Research Center,University of Florida) |
| |
| Abstract: | In order to keep pace with Moore's law,multilevel metallization has become the process of choice.Having a planar wafer surface before every successive step in multilevel metallization is important.The Chemical Mechanical Planarization(CMP) process is used in the semiconductor industry to achieve planar surfaces at every step of the multi-level metallization.In CMP,planarization is achieved primarily due to material removal by the use of abrasive particle slurries.In addition to the slurry chemistry,slurry p... |
| |
| Keywords: | CMP |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
