The equilibrium composition in GexSi1-x/Si self-assembled alloyquantum dot

The equilibrium composition in strained quantum dot is the result of both elastic relaxation and chemical mixing effects, which have a direct relationship to the optical and electronic properties of the quantum-dot-based device. Using the method of moving asymptotes and finite element tools, an efficient technique has been developed to compute the composition profile by minimising the Gibbs free energy in self-assembled alloy quantum dot. In this paper, the composition of dome-shaped Ge_xSi_1-x/Si quantum dot is optimised, and the contribution of the different energy to equilibrium composition is discussed. The effect of composition on the critical size for shape transition of pyramid-shaped GeSi quantum dot is also studied.