| 氧氩比对钴掺杂氧化锌薄膜光电性能的影响 |
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| 引用本文： | 袁明,李宏建,李雪勇,徐仁伯,周子游,王继飞.氧氩比对钴掺杂氧化锌薄膜光电性能的影响[J].发光学报,2010,31(4):498-502. |
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| 作者姓名： | 袁明 李宏建 李雪勇 徐仁伯 周子游 王继飞 |
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| 作者单位： | 1. 中南大学 物理科学与技术学院, 湖南 长沙 410083;
2. 中南大学 材料科学与工程学院, 湖南 长沙 410083 |
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| 基金项目： | 湖南省自然科学基金，中南大学科学基金 |
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| 摘 要： | 以氧化锌陶瓷靶和金属钴靶为靶材,利用磁控共溅射方法制备钴掺杂氧化锌(Co-ZnO)薄膜。研究了氧氩比对薄膜的结构、光学和电学性能的影响。结果表明:薄膜具有类似于ZnO的六方纤锌矿结构,并沿c轴择优生长;当氧氩比为2:8时,薄膜具有较好的纳米晶粒和表面结构,其霍尔迁移率为2.188×104cm2/V·s,最小电阻率为1.326×104Ω·cm,其薄膜透光率最高,且在紫外区有一个相对较强的发射峰。
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| 关 键 词： | Co-ZnO薄膜 电阻率 霍尔迁移率 透射光谱 光致发光谱 |
| 收稿时间： | 2009-09-15 |
| 修稿时间： | 2009-11-30 |
Influence of O-Ar Ratio on Optoelectronic Properties of Co-doped ZnO |
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| YUAN Ming,LI Hong-jian,LI Xue-yong,XU Ren-bo,ZHOU Zi-you,WANG Ji-fei.Influence of O-Ar Ratio on Optoelectronic Properties of Co-doped ZnO[J].Chinese Journal of Luminescence,2010,31(4):498-502. |
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| Authors: | YUAN Ming LI Hong-jian LI Xue-yong XU Ren-bo ZHOU Zi-you WANG Ji-fei |
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| Institution: | 1. College of Physics Science and Technology, Central South University, Changsha 410083, China;
2. School of Materials Science and Engineering, Central South University, Changsha 410083, China |
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| Abstract: | The Co doped thin ZnO films were prepared on glass substrates using RF magnetron sputtering method. The influence of O-Ar ratio on the structural, electrical and optical properties of the films have been studied. The films are single phase and have wurtzite structure with c-axis orientation, and have good textures with little nano-crystalline grains and smooth surface when O-Ar ratio is 2 ∶ 8. The concentration of carriers of these films decreases as O-Ar ratio decreases, but as the Hall mobilities increased the Hall resistance is the lowest when O-Ar ratio is 2 ∶ 8. The film deposited at the O-Ar ratio of 2 ∶ 8 shows a highest transmittance and has an emission peak. |
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| Keywords: | thin ZnO ∶ Co film resistivity hall mobility transmittion spectrum photoluminescent spectrum |
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