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Quantum Hall effect in a quasi-three-dimensional HgTe film |
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| Authors: | E. B. Olshanetsky Z. D. Kvon S. S. Kobylkin D. A. Kozlov N. N. Mikhailov S. A. Dvoretskii J. C. Portal |
| Affiliation: | 1.Institute of Semiconductor Physics, Siberian Branch,Russian Academy of Sciences,Novosibirsk,Russia;2.Novosibirsk State University,Novosibirsk,Russia;3.Grenoble High Magnetic Field Laboratory,Max-Planck-Institut für Festk?rperforschung and Centre National de la Recherche Scientique,Grenoble, Cedex 9,France;4.INSA,Toulouse Cedex 4,France;5.Institut Universitaire de France,Paris,France |
| Abstract: | Magnetotransport of a quasi-three-dimensional (100-nm) HgTe film in quantized magnetic fields has been experimentally investigated. It has been found that the film exhibits pronounced quantization of the Hall resistance accompanied by deep minima of the dissipative resistance. A transition from the three-dimensional behavior of Shubnikov-de Haas oscillations in semiclassical magnetic fields (ωcτ q ≤ 1) to a two-dimensional one in the quantum-Hall-effect regime has been discovered. The conduction electron cyclotron effective mass in mercury telluride has been determined from the temperature dependence of the Shubnikov-de Hass oscillations in such magnetic fields. |
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