Effect of Strong Electron-Phonon Interactions on an Interface Polaron |
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| Authors: | Zu-You LAI Shi-Wei GU T C AU-YEUNG W S LI Y Y YEUNG |
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| Institution: | 1. Department of Applied Physics, Shanghai Jiaotong University, Shanghai 200030, China;
2. Department of Applied Physics, Hong Kong Polytechnic, Hunghom, Hong Kong;
3. Electronic Engineering Department, Hong Kong Polytechnic, Hunghom, Hong Kong;
4. School of Electrical and Electric Engineering, Nanyang Technological University, Singapore 2263, Singapore |
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| Abstract: | The present work deals with an electron interacting strongly with both bulk longitudinal optical (LO) phonons and interface (IF) optical phonons in which we adopt and generalize the Tokuda's variational method for studying the interface polaron properties in polar crystals at zero temperature, In our approach, we can reduce the Hamiltollian equation of the system to a pair of integro-differential equations in two variational parameters of the electron wavefunction from which we can calculate various physical properties of an interface polaron including the ground state energy, average numbers of interacting phonons, the average distance from the interface and the anisotropic effective masses of the interface polaron. Numerical results are obtained explicitly for LiF crystal interfaced with NaF crystal as well as other similar systems with varying physical constants, which show the typical trends of variations for the effects of strong electron-phonon interactions on different physical properties of an interface polaron. |
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