Numerical study on strained InGaAsP/InGaP quantum wells for 850-nm vertical-cavity surface-emitting lasers |
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| Authors: | Y-K Kuo J-R Chen M-L Chen B-T Liou |
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| Institution: | (1) Department of Physics, National Changhua University of Education, Changhua, 500, Taiwan;(2) Department of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu, 300, Taiwan;(3) Department of Mechanical Engineering, Hsiuping Institute of Technology, Taichung, 412, Taiwan |
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| Abstract: | The physical and optical properties of compressively strained InGaAsP/InGaP quantum wells for 850-nm vertical-cavity surface-emitting
lasers are numerically studied. The simulation results show that the maximum optical gain, transparency carrier densities,
transparency radiative current densities, and differential gain of InGaAsP quantum wells can be efficiently improved by employing
a compressive strain of approximately 1.24% in the InGaAsP quantum wells. The simulation results suggest that the 850-nm InGaAsP/InGaP
vertical-cavity surface-emitting lasers have the best laser performance when the number of quantum wells is one, which is
mainly attributed to the non-uniform hole distribution in multiple quantum wells due to high valence band offset.
PACS 42.55.Px; 78.20.-e; 78.20.Bh; 78.30.Fs |
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