| 氮掺杂Ge2Sb2Te5相变存储器的多态存储功能 |
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| 引用本文： | 赖云锋,冯 洁,乔保卫,凌 云,林殷茵,汤庭鳌,蔡炳初,陈邦明.氮掺杂Ge2Sb2Te5相变存储器的多态存储功能[J].物理学报,2006,55(8):4347-4352. |
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| 作者姓名： | 赖云锋 冯 洁 乔保卫 凌 云 林殷茵 汤庭鳌 蔡炳初 陈邦明 |
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| 作者单位： | (1)Silicon Storage Technology,Inc.,Sunnyvale 94086,USA; (2)复旦大学专用集成电路和系统国家重点实验室，上海 200433; (3)上海交通大学微米/纳米加工技术国家重点实验室，薄膜与微细技术教育部重点实验室，上海 200030 |
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| 摘 要： | 通过反应溅射的方法，制备了N掺杂的Ge2Sb2Te5(N-GST)薄膜，用作相变存储器的存储介质.研究表明，掺杂的N以GeN的形式存在，不仅束缚了Ge2Sb2Te5 (GST)晶粒的长大也提高了GST的晶化温度和相变温度.利用N-GST薄膜的非晶态、晶态面心立方相和晶态六方相的电阻率差异，能够在同一存储单元中存储三个状态，实现相变存储器的多态存储功能.
关键词：
相变存储器
多态存储
N掺杂
2Sb2Te5')" href="#">Ge2Sb2Te5
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| 关 键 词： | 相变存储器 多态存储 N掺杂 Ge2Sb2Te5 |
| 文章编号： | 1000-3290/2006/55(08)/4347-06 |
| 收稿时间： | 12 6 2005 12:00AM |
| 修稿时间： | 2005-12-062006-03-28 |
Multiple-state storage capability of nitrogen-doped Ge2Sb2Te5 film for phase change memory |
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| Lai Yun-Feng,Feng Jie,Qiao Bao-Wei,Ling Yun,Lin Yin-Yin,Tang Ting-Ao,Cai Bing-Chu and Chen Bang-Ming.Multiple-state storage capability of nitrogen-doped Ge2Sb2Te5 film for phase change memory[J].Acta Physica Sinica,2006,55(8):4347-4352. |
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| Authors: | Lai Yun-Feng Feng Jie Qiao Bao-Wei Ling Yun Lin Yin-Yin Tang Ting-Ao Cai Bing-Chu and Chen Bang-Ming |
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| Institution: | 1 State Key Laboratory of Micro/Nano Fabrication Technology, Key Laboratory for Thin Film and Microfabrication of Ministry of Education, Shanghai Jiaotong University, Shanghai 200030, China;2 State Key Laboratory of Application Specific Integrated Circuit and System, Fudan University, Shanghai 200433, China |
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| Abstract: | Nitrogen-doped Ge2Sb2Te5 (N-GST) film for phase change memory was prepared by reactive sputtering. Testing results show that doped nitrogen combines with Ge to form GeN, which not only restrains crystal grain growth but also increases the crystallization temperature and phase transformation temperature of Ge2Sb2Te5 (GST). Phase change memory (PCM) with N-GST can realize three-state storage in one PCM cell by using the resistivity difference between the amorphous state, the face centered cubic phase and the hexagonal phase of GST. |
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| Keywords: | phase change memory multiple-state storage nitrogen doping Ge2Sb2Te5 |
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