Total Dose Test Technology and Damage Difference Study on CMOS Devices Under Different Irradiation Environment

The two in-circuit test systems, one is a HP4156 semiconductor parameter automation system for measuring steady total dose effect, another one is a system for measuring pulsed total dose effect, under different environment with working principle and technical specification are introduced in detail in the paper. The comparison study of total dose damage effects irradiated by Pulsed hard X ray and long pulsed γ-ray generated in Qiangguang-Ⅰaccelerator, and by ⁶⁰Co steady γ-ray on typical CMOS devices utilizing the two test systems has been performed, which lays a foundation for the further research of total dose effect on CMOS devices in the future.