A theoretical study of harmonic generation in a short period AlGaN/GaN superlattice induced by a terahertz field |
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Authors: | Chen Jun-Feng and Hao Yue |
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Institution: | Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China |
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Abstract: | Based on an improved energy dispersion relation, the
terahertz field induced nonlinear transport of miniband electrons in
a short period AlGaN/GaN superlattice is theoretically studied in
this paper with a semiclassical theory. To a short period
superlattice, it is not precise enough to calculate the energy
dispersion relation by just using the nearest wells in tight binding
method: the next to nearest wells should be considered. The results
show that the electron drift velocity is 30% lower under a dc
field but 10% higher under an ac field than the traditional
simple cosine model obtained from the tight binding method. The
influence of the terahertz field strength and frequency on the
harmonic amplitude, phase and power efficiency is calculated. The
relative power efficiency of the third harmonic reaches the peak
value when the dc field strength equals about three times the
critical field strength and the ac field strength equals about four
times the critical field strength. These results show that the
AlGaN/GaN superlattice is a promising candidate to convert radiation
of frequency ω to radiation of frequency 3ω or even
higher. |
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Keywords: | terahertz GaN superlattice nonlinear
transport |
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