Tensile deformation induced structural rearrangement in amorphous silicon nitride |
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| Authors: | N. Liao W. Xue P. Yang M. Zhang |
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| Affiliation: | (1) College of Mechanical and Electrical Engineering, Wenzhou University, 325035 Wenzhou, People’s Republic of China;(2) College of Business Administration, Jiangsu University, 212013 Zhenjiang, People’s Republic of China |
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| Abstract: | Silicon nitride exhibits good mechanical properties and thermal stability at high temperatures. Since experiments have limitations in nanoscale characterization of the chemical structure and related properties, atomistic simulation is a proper way to investigate the mechanism of this unique feature. In this paper, the melt-quench method is used to generate the amorphous structure of silicon nitride; then the structural properties of silicon nitride under tensile deformation were studied by angular pair distribution functions. The corresponding mechanism of tensile stress induced structure rearrangement is explored. |
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