Studies on nucleation kinetics of In1−xGaxP/GaAs by Liquid-Phase Epitaxy

Summary Nucleation kinetics during the Liquid-Phase Epitaxial (LPE) growth of In_1−xGa_xP on GaAs substrate have been studied. The behaviour of non-equilibrium solid-liquid interface between In-Ga-P solution and GaAs substrate has been analysed and hence the expression derived for the stress-induced supercooling has been incorporated in the classical heterogeneous nucleation theory. The condition for the growth of good-quality GaInP layer on GaAs substrate has been shown theoretically.