Improvement of transport properties for polycrystalline silicon prepared by plasma-enhanced chemical vapor deposition |
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| Authors: | T Kamiya A Suemasu T Watanabe T Sameshima I Shimizu |
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| Institution: | (1) Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan, JP;(2) CREST, JST, 3-13-11 Shibuya, Tokyo, 150-0002, Japan, JP;(3) The Graduate School, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama, 226-8502, Japan, JP;(4) Department of Electrical and Electronic Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Naka-machi, Koganei-city, Tokyo, Japan, JP |
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| Abstract: | The carrier transport property of polycrystalline silicon (poly-Si:H:F) thin films was studied in relation to film microstructure,
impurity, in situ or post-annealing treatments to obtain better carrier transport properties. Poly-Si:H:F films were prepared
from SiF4 and H2 gas mixtures at temperatures <300 °C. Dark conductivity of the films prepared at high SiF4/H2 gas flow ratio (e.g., 60/3 sccm) exhibits a high value for intrinsic silicon and its Fermi level is located near the conduction
band edge. The carrier incorporation is suppressed well, either by in situ hydrogen plasma treatment or by post-annealing
with high-pressure hot-H2O vapor. It is confirmed that weak-bonded hydrogen atoms are removed by the hot-H2O vapor annealing. In addition, evident correlation between impurity concentrations and dark conductivity is not found for
these films. It is thought that the carrier incorporation in the films prepared at high SiF4/H2 gas flow ratios is related to grain-boundary defects such as weak-bonded hydrogen. By applying hot-H2O vapor annealing at 310 °C to a 1-μm-thick p-doped (400)-oriented poly-Si:H:F film, Hall mobility was improved from 10 cm2/Vs to 17 cm2/Vs.
Received: 7 August 2000 / Accepted: 2 March 2001 / Published online: 20 June 2001 |
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| Keywords: | PACS: 73 50 -h 72 20 -I |
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