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Nonlinear absorption and Raman gain in helium-ion-implanted silicon waveguides
Authors:Liu Y  Tsang H K
Institution:Department of Electronic Engineering, The Chinese University of Hong Kong, Hong Kong, China. yliu@ee.cuhk.edu.hk
Abstract:We study whether helium ion implantation can reduce the carrier lifetime and thus reduce the density of two-photon-absorption-generated free carriers. Our experiments and theoretical model show that helium ion implantation into silicon waveguides can successfully reduce the free-carrier losses and allow net gain to be attained by cw-pumped stimulated Raman scattering without requiring reverse bias to remove the photogenerated free carriers.
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