| KTN thin films prepared by pulsed laser deposition on transparent single crystal quartz(100) |
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| 作者姓名： | WANG Xiaodong PENG Xiaofeng & ZHANG Duanming Laboratory of Phase Change and Interfacial Transport Phenomena |
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| 作者单位： | WANG Xiaodong，PENG Xiaofeng & ZHANG Duanming Laboratory of Phase Change and Interfacial Transport Phenomena，Department of Thermal Engineering，Tsinghua University，Beijing 100084，China; Department of Physics，Huazhong University of Science and Technology，Wuhan 430074，China |
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| 摘 要： | Using the Sol-Gel method to produce the KTN ultrafine powder and the sintering technique with K2O atmosphere to prepare KTN ceramics as the targets instead of the KTN single crystal, highly oriented KTN thin films were produced on the transparent single crystal quartz (100) by the pulsed laser deposition (PLD). Since the thermal stress sustained by the quartz is relatively small, the limit temperature of the quartz substrates (300℃) is much lower than that of the P-Si substrates (560℃); the prepared thin film is at amorphous state. Increasing the pulsed laser energy density in the process incorporated with annealing the film after deposition at different temperatures converts the amorphous films into crystal. The optimal pulsed laser energy density and annealing temperature were 2.0 J/cm2 and 600℃, respectively. A discussion was made to understand the mechanism of film production at relatively low substrate temperature by PLD and effects of the annealing temperatures on the forming of the perovskite p
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| 收稿时间： | 3 June 2004 |
KTN thin films prepared by pulsed laser deposition on transparent single crystal quartz (100) |
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| WANG Xiaodong,PENG Xiaofeng & ZHANG Duanming Laboratory of Phase Change and Interfacial Transport Phenomena,.KTN thin films prepared by pulsed laser deposition on transparent single crystal quartz(100)[J].Science in China(Physics Astronomy),2005,48(1):33-43. |
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| Authors: | WANG Xiaodong PENG Xiaofeng ZHANG Duanming |
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| Institution: | 1. Laboratory of Phase Change and Interfacial Transport Phenomena, Department of Thermal Engineering,Tsinghua University, Beijing 100084, China
2. Department of Physics, Huazhong University of Science and Technology, Wuhan 430074, China |
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| Abstract: | Using the Sol-Gel method to produce the KTN ultrafine powder and the sintering technique with K2O atmosphere to prepare KTN ceramics as the targets instead of the KTN single crystal, highly oriented KTN thin films were
produced on the transparent single crystal quartz (100) by the pulsed laser deposition (PLD). Since the thermal stress sustained
by the quartz is relatively small, the limit temperature of the quartz substrates (300°C) is much lower than that of the P-Si
substrates (560°C); the prepared thin film is at amorphous state. Increasing the pulsed laser energy density in the process
incorporated with annealing the film after deposition at different temperatures converts the amorphous films into crystal.
The optimal pulsed laser energy density and annealing temperature were 2.0 J/cm2 and 600°C, respectively. A discussion was made to understand the mechanism of film production at relatively low substrate
temperature by PLD and effects of the annealing temperatures on the forming of the perovskite phase, and optimal conditions
for the orientation of the crystal grain. |
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| Keywords: | PLD technology KTN thin film single crystal quartz pulsed energy density annealing perovskite phase |
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