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窄禁带稀磁半导体二维电子气的磁阻振荡研究
引用本文:朱博,桂永胜,周文政,商丽燕,仇志军,郭少令,张福甲,褚君浩. 窄禁带稀磁半导体二维电子气的磁阻振荡研究[J]. 物理学报, 2006, 55(6): 2955-2960
作者姓名:朱博  桂永胜  周文政  商丽燕  仇志军  郭少令  张福甲  褚君浩
作者单位:(1)兰州大学物理系,兰州 730000; (2)中国科学院上海技术物理研究所红外物理国家重点实验室,上海 200083; (3)中国科学院上海技术物理研究所红外物理国家重点实验室,上海 200083;兰州大学物理系,兰州 730000
基金项目:国家研究发展基金;国家自然科学基金
摘    要:通过改变温度和磁场方向对调制掺杂的n型Hg0.82Cd0.16Mn0.02Te/Hg0.3Cd0.7Te第一类量子阱中磁性二维电子气磁阻拍频振荡进行了深入的研究,发现不仅温度的变化能够引起磁阻拍频节点位置的变化. 而且改变磁场方向,可以分别调整塞曼分裂和朗道分裂. 从对拍频的分析中,可以将依赖于磁场垂直方向的朗道能级分裂和依赖于整个磁场大小的塞曼分裂区分开来.关键词:磁性二维电子气自旋分裂塞曼分裂拍频

关 键 词:磁性二维电子气  自旋分裂  塞曼分裂  拍频
文章编号:1000-3290/2006/55(06)/2955-06
收稿时间:2005-11-30
修稿时间:2005-11-302005-12-30

Magnetoresistance oscillation of two-dimensional electrons gas in narrow gap dilute magnetic semiconductor
Zhu Bo,Gui Yong-Sheng,Zhou Wen-Zheng,Shang Li-Yan,Qiu Zhi-Jun,Guo Shao-Ling,Zhang Fu-Jia,Chu Jun-Hao. Magnetoresistance oscillation of two-dimensional electrons gas in narrow gap dilute magnetic semiconductor[J]. Acta Physica Sinica, 2006, 55(6): 2955-2960
Authors:Zhu Bo  Gui Yong-Sheng  Zhou Wen-Zheng  Shang Li-Yan  Qiu Zhi-Jun  Guo Shao-Ling  Zhang Fu-Jia  Chu Jun-Hao
Affiliation:1. State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083,China; 2.Department of Physics LanZhou University, Lanzhou 730000, China
Abstract:This paper study the detailed magnetoresistance oscillation in Shubnikov_de Hass (SdH) of magnetic two dimensional electron gas consisting of a modulation doped n type Hg_ 0.82 Cd_ 0.16 Mn_ 0.02 Te/Hg_ 0.3 Cd_ 0.7 Te first type quantum well by changing temperature and the angle of the sample with aspect of applied magnetic field, by which found that the changing of temperature and tilt angle will cause the varying of beating node position, By analyzing beating patterns, the magnetic angle dependent Landau splitting can be separated from magnetic magnitude dependent Zeeman splitting.
Keywords:mmgnetic two-dimensional electron gas   spin splitting   zeeman splitting   beating patterns
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