InAs/GaAs (1 1 1)A heteroepitaxial systems |
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Authors: | H. Yamaguchi K. Kanisawa S. Miyashita Y. Hirayama |
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Affiliation: | a NTT Basic Research Laboratories, Physics Science Laboratories, NTT Corporation, 3-1, Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan;b NTT Advanced Technology, Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan;c Core Research for Evolutional Science and Technology (CREST), JST, Kawaguchi, Saitama 331-0012, Japan |
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Abstract: | We studied the structural, electrical, and mechanical properties of an InAs thin film grown on GaAs (1 1 1)A substrates by molecular beam epitaxy. In contrast to conventionally used (0 0 1) surfaces, where Stranski–Krastanov growth dominates the highly mismatched heteroepitaxy, layer-by-layer growth of InAs can be established. One of the largest advantages of this unique heteroepitaxial system is that it provides a two-dimensional electron gas system in the near-surface region without the problem of electron depletion. We review the fundamental properties and applications of this unique heteroepitaxial system. |
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Keywords: | MEMS NEMS Piezoresistance InAs/AlGaSb Heterostructures |
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