Resonant detection of terahertz radiation utilizing plasma waves in high-electron-mobility transistors

This paper theoretically studies the high-electron-mobilitytransistor (HEMT) driven by the terahertz radiation. It calculatesthe gate-to-source/drain admittance and the detection responsivityof the HEMT as a function of the signal frequency. It finds that thepeaks of the admittances and the responsivity show redshift, and theheights of the peaks decrease with increasing the lengths of thesource-to-gate and gate-to-drain spacing. Such phenomena may beuseful in designing different HEMTs by utilizing the effectsassociated with the plasma oscillations excitation.