| 强光致CCD过饱和效应机理分析 |
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| 引用本文： | 张震,程湘爱,姜宗福.强光致CCD过饱和效应机理分析[J].强激光与粒子束,2010,22(2). |
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| 作者姓名： | 张震 程湘爱 姜宗福 |
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| 作者单位： | 国防科学技术大学 光电科学与工程学院, 长沙 410073 |
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| 基金项目： | 国防科技基础研究基金 |
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| 摘 要： | 分析了正常工作条件下CCD信号检测电路工作的全过程;指出了在正常工作状态下CCD对检测电路的注入是以低占空比的周期性窄脉冲方式进行的,配合有效的复位机制,使每个像素的复位电平保持为常值。根据CCD过饱和状态的产生条件和CCD信号传输沟道内的电势分布特点,提出了CCD过饱和状态的物理实质,即激光在CCD的受辐照点处提供了一个光生电流源,光生电荷将CCD的传输势阱全部填满之后使得CCD由一个电荷器件转变为一个电流器件。电流通过由CCD时钟的低电平所确定的沟道传输,使CCD对检测电路的注入以近乎连续的周期性长脉冲方式进行,导致了复位电平的改变,造成过饱和的视频图像。
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| 关 键 词： | 图像传感器 CCD 过饱和效应 串扰 复位电平 |
| 收稿时间： | 1900-01-01; |
Mechanism analysis of CCD excessive saturation effect induced by intense light |
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| ZhangZhen,ChengXiang%c'ai,JiangZongfu.Mechanism analysis of CCD excessive saturation effect induced by intense light[J].High Power Laser and Particle Beams,2010,22(2). |
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| Authors: | ZhangZhen ChengXiang%c'ai JiangZongfu |
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| Institution: | College of Optoelectronic Science and Engineering， National University of Defense Technology, Changsha 410073， China |
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| Abstract: | The charge measurement process of CCD in normal work state has been analyzed.It is indicated that the mode of charge injecting to the measurement capacitor is the periodic narrow pulse that has a low fill factor when the CCD is normal.After the charge signal is measured,the feed-through level is restored under the effective resetting action.According to the condition under which the excessive saturation state of CCD happens and potential characteristics in the signal charge transfer channel of CCD,we put fo... |
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| Keywords: | CCD imagine sensor CCD excessive saturation effect crosstalk feed-through level |
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