Electrochemical properties of Gd@C82 and its anions |
| |
| Institution: | 1. School of Chemical and Environmental Engineering, China University of Mining and Technology (Beijing), Beijing 100083, PR China;2. National Key Laboratory of Biochemical Engineering, Institute of Process Engineering, Chinese Academy of Sciences, Beijing 100190, PR China;1. Department of Physics, University of the Free State, Bloemfontein ZA9300, South Africa;2. Department of Physics, Islamic University, Gaza, P.O. Box 108, Palestine;1. Department of Materials Science and Technology, Graduate School of Engineering, Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka, Niigata 940-2188, Japan;2. JST, ACT-C, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan;1. Micro and Nanosystems Group, Department of Microtechnology and Nanoscience, Chalmers University of Technology, 412 96, Gothenburg, Sweden;2. Wallenberg Wood Science Center, Chalmers University of Technology, 412 96, Gothenburg, Sweden;3. Department of Chemistry and Chemical Engineering, Chalmers University of Technology, 412 96, Gothenburg, Sweden |
| |
| Abstract: | Cyclic voltammogram (CV) and differential pulse voltammogram (DPV) of Gd@C82 were measured by using mixed solvent system and low temperature. The sixth and seventh electron transfers for Gd@C82 were observed under this condition. Analysis of its electrochemical data and the changes of its UV–VIS–NIR spectrum indicated that Gd@C82(n−) (n=1,3) anions had been generated by chemical method. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
