基于共振隧穿二极管的集成电路研究

RTD基集成电路所具有的超高速、低功耗和自锁存的特性，使其在数字电路、混合信号电路以及光电子系统中有着重要的应用。首先对RTD与化合物半导体HEMT，HBT以及硅CMOS器件的集成工艺进行了介绍。在MOBILE电路及其改进和延伸的基础上，对高速ADC／DAC电路和低功耗的存储器电路进行了具体的分析。最后对RTD基电路面临的主要问题和挑战进行了讨论，提出基于硅基RTD与线性阈值门（LTG）逻辑相结合是未来纳米级超大规模集成电路的最佳发展方向。

Research on the RTD-based Integrated Circuits

RTD-based circuits have important applications in digital circuit,mixed signal circuit and optoelectronic system with the characteristics of ultra-high speed,low power and self-latching.The integration technologies of RTD with HEMT,HBT and CMOS devices are first introduced.High speed ADC/DAC and low power memory circuits are presented.Finally the main problems and challenges of RTD-based circuits are discussed.Silicon based RTD combined with LTG logic is the most suitable candidate for future nano-scale ultra-large integration circuit(ULSI).