| PECVD法低温形成新型SiO_xN_y薄膜的界面特性研究 |
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| 引用本文： | 陈蒲生,王川.PECVD法低温形成新型SiO_xN_y薄膜的界面特性研究[J].固体电子学研究与进展,1997,17(2):158-164. |
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| 作者姓名： | 陈蒲生 王川 |
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| 作者单位： | 华南理工大学应用物理系!广州，510641(陈蒲生，王川，冯文修，王锋，田万廷)，华南理工大学测试分析中心!广州，510641(刘小阳) |
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| 基金项目： | 国家自然科学基金，广东省自然科学基金 |
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| 摘 要： | 研究了等离子体增强化学气相淀积（PECVD）方法低温形成新型SIOxNy薄膜的界面特性。研究侧重于PECVDSiOxNy薄膜良好界面特性的控制，探索出界面特性与微观组份、衬底工作温度、反应室气压、退火致密、金属化后退火的相互关系。同时给出了获取界面等特性优良的PECVDSiOxNy薄膜的最优化工艺条件，并对实验结果进行了理论分析与讨论。
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| 关 键 词： | 低温 等离子体增强化学气相淀积 介质膜 界面特性 |
Study of Interface Characteristics of New Type SiO_xN_y Thin Film Formed by Low Temperature PECVD |
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| Chen Pusheng Wang Chuan Feng Wenxiu Wang Feng Tian Wangting.Study of Interface Characteristics of New Type SiO_xN_y Thin Film Formed by Low Temperature PECVD[J].Research & Progress of Solid State Electronics,1997,17(2):158-164. |
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| Authors: | Chen Pusheng Wang Chuan Feng Wenxiu Wang Feng Tian Wangting |
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| Abstract: | Interface characteristics of a new type SiOxNy thin film formed by low temperature Plasma Enhanced Chemical Vapour Deposition (PECVD) have been studied in this paper. Research work mainly emphasizes the control of the better interface characteristic of the PECVD SiOxNy thin film. The interrelations of the interface characteristic with the microscopical composition, the substrate temperature, the chamber pressure, the annealing densification and the post-metallization annealing, have been explored. The best processing condition to acquire better interface characteristics of the PECVD SiOxNy thin film is given. The theoreticalanalyses and discussions of these experimental results are also made in this paper. |
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| Keywords: | Low Temperature Plasma Enhanced Chemical Vapour Deposition Dielectric Film Interface Characteristic |
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