Disorder-induced Raman scattering of In1−xGaxP in the transverse acoustic phonon region |
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| Authors: | BH Bayramov VV Toporov ShB Ubaydullaev L Hildisch E Jahne |
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| Institution: | A.F. Ioffe Physico-Technical Institute, Academy of Sciences of the USSR, 194021, Leningrad, USSR;Zentralinstitut für Elektronenphysik der Akademie der Wissenschaften der DDR, Berlin, DDR |
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| Abstract: | Raman scattering measurements have been performed on In1?xGaxP (0.62?x?1) over the entire frequency range of first and second order scattering. Besides the already known disorder activated band between the LO(Γ) and TO(Γ) modes a new disorder activated band is found in the region of transverse acoustic phonons around 87 cm-1. The position of the new band shifts only slightly with composition while its strength and line-shape change. |
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