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Bonding and composition diagrams for sputtered a-Si : H
Authors:WT Pawlewicz  PM Martin
Institution:Pacific Northwest Laboratory Richland, Washington 99352, USA
Abstract:The combined influence of H partial pressure (pH) and deposition rate (RD) on Si-H bonding and total H content in diode-sputtered a-Si : H is presented in two simple graphs for the case of substrate temperature (Ts) equal to 225°C. Similar to a phase diagram, the graphs predict the H content and Si-H bonding that will result if a deposition is carried out with any prescribed pair of values (pH, RD), where 0.04 < pH < 10 Paand 0.01 < RD < 1 nm/sec. Well defined regions of Si-H bonding represented by dominant infrared stretching absorptions at 2000, 2090 and 2150 cm?1 are obvious in the bonding diagram. The absorption at 2090 cm?1 is the most commonly observed and is obtainable over a wide range of intermediate values of pH and RD. The absorption at 2000 cm?1 is dominant only for the lowest pH and the highest RD. The absorption at 2150 cm?1 is dominant in films deposited at high pH and low RD. The composition diagram shows that highest total H content is obtained for low RD and high pH, and lowest total H content results for high RD and low pH
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