Electronic structure of compounds at platinum - silicon (111) interface |
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Authors: | I. Abbati L. Braicovich B. De Michelis O. Bisi R. Rovetta |
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Affiliation: | Istituto di Fisica, Politecnico di Milano, 20133 Milano, Italy;Istituto di Fisica, Università di Modena, 41100 Modena, Italy |
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Abstract: | The electronic structure of Platinum silicides produced by thin film reaction is studied using ultraviolet photoemission and Auger spectroscopy. Spectra have been taken during the various stages of Si-Pt intermixing, in order to monitor the changes in the valence band, which take place during the reaction. The experimental data are compared with semi-empirical LCAO calculations. The importance of the coupling between Silicon p and Platinum d-states in determining the basic features of the chemical bond is discussed. |
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