Method for the Microwave Measurement of Carrier Lifetime in Lightly Doped Silicon Ingots |
| |
Authors: | P A Borodovskii A F Buldygin A S Tokarev E V Chernyavskii |
| |
Institution: | (1) Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, Novosibirsk, Russia |
| |
Abstract: | A further investigation is conducted into a new microwave method for evaluating bulk lifetime in silicon ingots |
| |
Keywords: | |
本文献已被 SpringerLink 等数据库收录! |
|