Dielectric and tunable properties of highly (110)-oriented (Ba<Subscript>0.65</Subscript>Sr<Subscript>0.35</Subscript>)TiO<Subscript>3</Subscript> thin films deposited on Pt/LaNiO<Subscript>3</Subscript>/SiO<Subscript>2</Subscript>/Si substrates期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

Dielectric and tunable properties of highly (110)-oriented (Ba0.65Sr0.35)TiO3 thin films deposited on Pt/LaNiO3/SiO2/Si substrates

Authors:	Yiping Guo Daisuke Akai Kazuaki Sawada Makoto Ishida Mingyuan Gu

Affiliation:	(1) State Key Laboratory of MMCs, Shanghai Jiaotong University, Shanghai, 200030, China;(2) Venture Business Laboratory, Toyohashi University of Technology, 1-1 Tempaku-cho, Toyohashi, Japan;(3) Department of Electrical and Electronic Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi 441-8580, Japan

Abstract:	Highly (110)-oriented Ba_0.65Sr_0.35TiO₃ films were deposited on Pt/LaNiO₃/SiO₂/Si substrates by a sol–gel method. It was found that the (110)-preferred Pt film was very effective for growing (110)-oriented ferroelectric films with perovskite structure. The as-grown Ba_0.65Sr_0.35TiO₃ films showed good dielectric properties with dielectric constant $varepsilon_{33}^{T} /varepsilon_{0} = 1750$ and loss tangent tan δ = 0.026. Excellent dielectric tunability was also achieved in the (110)-oriented films. With applying an electric field of 230 kV/cm at 100 kHz, the dielectric tunability and the figure of merit can reach up to 63.4% and 16, respectively. These results indicate that the highly (110)-oriented Ba_0.65Sr_0.35TiO₃ film is a promising candidate for the applications in microwave tunable devices.

Keywords:	BST Dielectric tunability (110) orientation LaNiO₃
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