| GaAs/AlGaAs量子点阵的制备及其荧光特性 |
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| 引用本文： | 王杏华,李国华.GaAs/AlGaAs量子点阵的制备及其荧光特性[J].发光学报,1998,19(3):202-206. |
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| 作者姓名： | 王杏华 李国华 |
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| 作者单位： | 半导体超晶格国家重点实验室中国科学院半导体研究所, 北京 100083 |
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| 摘 要： | 采用电子束曝光和反应离子刻蚀的工艺,将GaAs/AlGaAs量子阱外延材料制成量子点阵,其光荧光谱显示出蓝移,并且蓝移量随着量子点直径尺寸的减少而增大。
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| 关 键 词： | GaAs/AlGaAs 量子点 光荧光 |
| 收稿时间： | 1998-03-18 |
PREPARATION OF GaAs/AlGaAs QUANTUM DOTS AND THEIR PHOTOLUMINESCENCE CHARACTERISTICS |
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| Wang Xinghua,Li Guohua,Li Chengfang,Li Yuexia,Cheng Wenchao,Song Aiming,Liu Jian,Wang Zhiming.PREPARATION OF GaAs/AlGaAs QUANTUM DOTS AND THEIR PHOTOLUMINESCENCE CHARACTERISTICS[J].Chinese Journal of Luminescence,1998,19(3):202-206. |
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| Authors: | Wang Xinghua Li Guohua Li Chengfang Li Yuexia Cheng Wenchao Song Aiming Liu Jian Wang Zhiming |
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| Institution: | National Laboratory for Superlattices and Microstructures Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 |
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| Abstract: | GaAs/AlGaAs quantum dots were made by Electron Beam Lithography (EBL) and Reactive Ion Etching(RIE) on GaAs/AlGaAs quantum well wafers. Their photoluminescence shows blue shift, the amount of blue shift increases with the decrease of quantum dot size. |
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| Keywords: | GaAs/AlGaAs quantum dot luminescence |
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