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Mass attenuation coefficients for n-type InSe, InSe:Gd, InSe:Ho and InSe:Er single crystals |
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| Authors: | Orhan elli Salih Erzeneo lu Bekir Gürbulak |
| Institution: | a Department of Physics Education, Education Faculty of Erzincan, Atatürk University, Erzincan 24030, Turkey b Department of Physics, Faculty of Arts and Sciences, Atatürk University, 25240, Erzurum, Turkey |
| Abstract: | Measurements have been made to determine the mass attenuation coefficients of undoped n-type InSe, and Gd, Ho, Er doped n-InSe single crystals using a Si(Li) detector in the energy region 15.746–40.930 keV X-ray energies with energy dispersive X-ray fluorescence systems. InSe, InSe:Gd, InSe:Ho and InSe:Er single crystals were grown by using the stockbarger method. The measured values are graphically compared with the theoretical ones obtained using WinXcom. |
| Keywords: | Crystal growth Mass attenuation coefficients Transmission method |
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