Zeeman effect for holes in a Ge/Si system with quantum dots |
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Authors: | A V Nenashev A V Dvurechenskii A F Zinov’eva |
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Institution: | (1) Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090, Russia |
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Abstract: | The tight binding approximation is employed to study the Zeeman effect for the hole ground state in a quantum dot. A method is proposed for calculating the g factor for localized states in a quantum dot. This method can be used both for hole states and for electron states. Calculations made for a Ge/Si system with quantum dots show that the g factor of a hole in the ground state is strongly anisotropic. The dependence of the g factor on the size of a germanium island is analyzed and it is shown that anisotropy of the g factor increases with the island size. It is shown that the value of the g factor is mainly determined by the contribution of the state with the angular momentum component J z =±3/2 along the symmetry axis of the germanium island. |
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