Tuning graphene nanoribbon field effect transistors via controlling doping level |
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Authors: | Lu Wang Jiaxin Zheng Jing Zhou Rui Qin Hong Li Wai-Ning Mei Shigeru Nagase Jing Lu |
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Affiliation: | 1. State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing, 100871, People??s Republic of China 2. Department of Theoretical and Computational Molecular Science, Institute for Molecular Science, Okazaki, 444-8585, Japan 3. Department of Physics, University of Nebraska at Omaha, Omaha, NE, 68182-0266, USA
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Abstract: | By performing first-principles transport simulations, we demonstrate that n-type transfer curves can be obtained in armchair-edged graphene nanoribbon field effect transistors by the potassium atom and cobaltocene molecule doping, or substituting the carbon by nitrogen atom. The Dirac point shifts downward from 0 to ?12?V when the n-type impurity concentration increases from 0 to 1.37%, while the transfer curves basically maintain symmetric feature with respect to the Dirac point. In general, the on/off current ratios are decreased and subthreshold swings are increased with the increasing doping level. Therefore, the performance of armchair-edged graphene nanoribbon field effect transistors can be controlled via tuning the impurity doping level. |
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