|
|||||
|
|
Electronic structure of GaAs/AlGaAs quantum double rings in lateral electric field |
|
| Authors: | Y.Yao T.Ochiai T.Mano T.Kuroda T.Noda N.Koguchi K.Sakoda |
| Affiliation: | 1. National Institute for Materials Science,Namiki 1-1,Tsukuba 305-0044,Japan;University of Tsukuba,1-1-1 Tennodai,Tsukuba 305-8577,Japan 2. National Institute for Materials Science,Namiki 1-1,Tsukuba 305-0044,Japan 3. L-NESS,Universitá di Milano Bieocca,Via Cozzi 52,Milano 20125,Italy |
| Abstract: | A three-dimensional model of GaAs/A1GaAs quantum double rings in the lateral static electric field is investigated theoretically.The eigenvalue problem with the effective-mass approximation is solved by means of the finite-element method.The energy levels and wave functions of quantum-confined electrons and heavy holes are obtained and show an agreement with our previous theoretical and experimental studies.It is shown in the approximation of neglecting the Coulomb attraction between the electron and heavy hole that a relatively large Stark shift of exciton emission of 4 meV is attainable with an applied electric field of 0.7 kV/cm. |
| Keywords: | |
| 本文献已被 万方数据 等数据库收录！ | |