| 用直流中空阴极放电方法 (DC HCD)生长的纳米级碳的氮化物薄膜研究(英文) |
| |
| 引用本文： | YAN Y.H.,SHI Y.C.,YANG P.,TANG X.L.,FENG P.X..用直流中空阴极放电方法 (DC HCD)生长的纳米级碳的氮化物薄膜研究(英文)[J].光散射学报,2005,17(1):81-83. |
| |
| 作者姓名： | YAN Y.H. SHI Y.C. YANG P. TANG X.L. FENG P.X. |
| |
| 作者单位： | Department of Physics，Donghua University，Shanghai 200051，P.R.China，Department of Physics，Donghua University，Shanghai 200051，P.R.China，Department of Physics，Donghua University，Shanghai 200051，P.R.China，Department of Physics，Donghua University，Shanghai 200051，P.R.China，Department of Physics，Donghua University，Shanghai 200051，P.R.China |
| |
| 摘 要： | There is growing interest in the underlying physical processes in optoelectronic devices based on thin-film multilayer structures.Recently, many investigators have made great efforts on synthesizing the ultra-hard nanoscale carbon nitride thin films.Consi…
|
| 关 键 词： | 氮化物薄膜 放电方法 中空阴极 纳米级 直流 生长 碳 |
| 文章编号： | 1004-5929(2005)01-0081-03 |
| 收稿时间： | 2004/8/1 |
| 修稿时间： | 2004年8月1日 |
Investiagtion of Nanoscale Carbon Nitride Thin Films Grown Using DC HCD Hollow Cathode Discharge |
| |
| YAN Y H,SHI Y C,YANG P,TANG X L,FENG P X.Investiagtion of Nanoscale Carbon Nitride Thin Films Grown Using DC HCD Hollow Cathode Discharge[J].Chinese Journal of Light Scattering,2005,17(1):81-83. |
| |
| Authors: | YAN Y H SHI Y C YANG P TANG X L FENG P X |
| |
| Institution: | Department of Physics, Donghua University, Shanghai 200051, P.R.China |
| |
| Abstract: | There is growing interest in the underlying physical processes in optoelectronic devices based on thin-film multilayer structures. Recently, many investigators have made great efforts on synthesizing the ultra - hard nanoscale carbon nitride thin films. Considering low cost and simple configuration, we used DC hollow cathode discharge (HCD) for deposition of nanoscale carbon nitride thin films. |
| |
| Keywords: | |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
