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Background charges and quantum effects in quantum dots transport spectroscopy
Authors:M. Pierre   M. Hofheinz   X. Jehl   M. Sanquer   G. Molas   M. Vinet  S. Deleonibus
Affiliation:(1) CEA-INAC-SPSMS-LaTEQS, CEA-Grenoble, 17 rue des Martyrs, 38054 Grenoble, France;(2) DRT-LETI-D2NT-LNDE, CEA-Grenoble, France;(3) Present address: University of California, Santa Barbara, USA
Abstract:We extend a simple model of a charge trap coupled to a single-electron box to energy ranges and parameters such that it gives new insights and predictions readily observable in many experimental systems. We show that a single background charge is enough to give lines of differential conductance in the stability diagram of the quantum dot, even within undistorted Coulomb diamonds. It also suppresses the current near degeneracy of the impurity charge, and yields negative differential lines far from this degeneracy. We compare this picture to two other accepted explanations for lines in diamonds, based respectively on the excitation spectrum of a quantum dot and on fluctuations of the density-of-states in the contacts. In order to discriminate between these models, we emphasize the specific features related to environmental charge traps. Finally we show that our model accounts very well for all the anomalous features observed in silicon nanowire quantum dots.
Keywords:  KeywordHeading"  >PACS 73.23.Hk Coulomb blockade   single-electron tunneling  73.20.Hb Impurity and defect levels   energy states of adsorbed species  73.63.Kv Quantum dots
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