New approach to model nonquasi-static (NQS) effects for MOSFETs. Part I: Large-signal analysis |
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| Authors: | Roy AS Vasi JM Patil MB |
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| Institution: | Dept. of Electr. Eng., Indian Inst. of Technol., Mumbai, India; |
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| Abstract: | This paper presents a new nonquasi-static (NQS) model for the MOSFET. The model is derived from physics and only relies on the very basic approximation needed for a charge-based model. To derive the model, a popular variational technique named Galerkin's Method has been used. The model proves to be very accurate even for extremely fast changes in the bias voltages. Simulation results show a very good match even when the rise time of the applied signal is smaller than the transit time of the device. |
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